The currently used 850 nm wavelength LEDs look like weak red spots, which are especially noticeable in dark environments. The solution is to change the wavelength to 940 nm, which is 130 times less likely to be noticed by the naked eye, but the camera sensor can easily detect this invisible emission. This is a major challenge for infrared lighting used in such applications.
The Oslon Black SFH 4725S, introduced by OSRAM Opto Semiconductors, is the most ideal component for this type of application. This small infrared LED has a wavelength of 940 nm and an optical output power of up to 980 mW at an operating current of 1 W. The foundation behind this efficiency is the Nanostack technology, which has been successfully applied by OSRAM to enable a single chip to provide two emission centers, thus doubling the light output. The SFH 4725S delivers 450mW/s at 90° angle of emission, providing excellent illumination for surveillance areas. The intensity of the radiation (calculated in milliwatts per sphere) represents the light output over a range of stereo angles and therefore represents the intensity of the light.
The SFH 4725S is packaged in a black package to ensure that this component is completely hidden behind the camera lens. In the small product category, Oslon is currently one of the most powerful product lines in the field of visual and infrared lighting. The Oslon infrared component is only 3.85 x 3.85 x 2.29 mm and is the smallest of the infrared IREDs with 1W of optical power.
The triode, the full name should be a semiconductor triode, also known as a bipolar transistor, a crystal triode, is a semiconductor device that controls current. Its function is to amplify the weak signal into an electrical signal with a large amplitude value, and also as a non-contact switch.
Transistor is one of the basic components of semiconductors, with current amplification, is the core component of electronic circuits. The triode is made up of two closely spaced PN junctions on a semiconductor substrate. The two PN junctions divide the monolithic semiconductor into three parts, the middle part is the base area, and the two sides are the emitter area and the collector area, and the arrangement is PNP. And NPN two.
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