GaN LEDs on silicon substrates, according to current efficiency and cost projections, will be divided into three phases: by 2010 will reach 90 ~ 100lm / W, the average 1W chip cost is about 1 yuan; will reach by 2015 120~140lm/W, the average 1W chip cost will drop to 1/2 in 2010; by 2020 it will reach 160~200lm/W, and the average 1W chip cost will drop to 1/3 in 2010. Until then, if you replace the 60W incandescent lamp with LED, the price of the chip is about 1.5 yuan. Of course, this has a premise that the development of a light-emitting structure that slows down the DROOP effect is a common problem to be solved by any of the substrate epitaxial gallium nitride LEDs.
At present, the efficiency of white-based power LEDs for white light is generally 70-80 lm/W, and the mass-produced chips are mainly blue-green optical chips of 0.2 mm x 0.2 mm. No high-efficiency silicon substrate LEDs have been found. There is a physical bottleneck. From the microscopic analysis, the recent international first-class epitaxial material dislocation density TDD is about 6×108cm -2 , and our silicon substrate LED is also in this range; from a macro perspective, silicon substrate LED performance at high current density stable.
From the current level, the silicon substrate semiconductor lighting technology route needs to overcome several key technologies, including 6-inch MOCVD equipment manufacturing technology, 6-inch epitaxial material growth technology (light-emitting structure that slows down the DROOP effect), and 6-inch chip manufacturing technology.
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