[Intelligent LED News] Recently, IMEC (Interuniversity Microelectronics Centre, European Microelectronics Research Center) announced new developments in the R&D project of the GaN Industrial Alliance Program (IIAP), which jointly developed a 200 mm silicon with its partners. A technique for growing GaN/AlGaN on a wafer.
With this new technology, GaN MISHEMTs (metal-insulator semiconductor high-electron mobility transistors) can strictly follow the pollution control requirements of CMOS (Complementary Metal Oxide Semiconductor) in the process line. Production is carried out (no need to add gold as a precious metal), which enables high-quality GaN products to be mass-produced on a 200 mm silicon substrate.
According to IMEC, the technical advantage is mainly to achieve large-scale production and good compatibility. Gallium nitride is a new generation of power devices that have the potential to replace silicon components. IMEC's ​​recent successful use of Applied Materials' MOCVD to successfully produce gallium nitride silicon wafers with no cracks on the surface and a bend of less than 50 microns on 200 mm silicon wafers is an important milestone, as the production of large size wafers is significant for cost reduction.
The second effective factor in reducing costs is how to make power devices compatible with standard CMOS manufacturing processes and tools. IMEC's ​​new technology demonstrates the production of GaN MISHEMTs using standard CMOS processes and verifies that all devices require only minor adjustments in software and hardware. Typically, gold, a precious metal, is used in the circuit connections and gate structures of GaN products, but it makes GaN processing incompatible with CMOS processes. IMEC solves the compatibility problem based on a gold-free circuit connection system and a gold-free metal-insulated semiconductor (MIS) gate structure. This MISHEMT design can also effectively reduce the high leakage problem of traditional HEMTs (high electron mobility transistors).
With this new technology, GaN MISHEMTs (metal-insulator semiconductor high-electron mobility transistors) can strictly follow the pollution control requirements of CMOS (Complementary Metal Oxide Semiconductor) in the process line. Production is carried out (no need to add gold as a precious metal), which enables high-quality GaN products to be mass-produced on a 200 mm silicon substrate.
According to IMEC, the technical advantage is mainly to achieve large-scale production and good compatibility. Gallium nitride is a new generation of power devices that have the potential to replace silicon components. IMEC's ​​recent successful use of Applied Materials' MOCVD to successfully produce gallium nitride silicon wafers with no cracks on the surface and a bend of less than 50 microns on 200 mm silicon wafers is an important milestone, as the production of large size wafers is significant for cost reduction.
The second effective factor in reducing costs is how to make power devices compatible with standard CMOS manufacturing processes and tools. IMEC's ​​new technology demonstrates the production of GaN MISHEMTs using standard CMOS processes and verifies that all devices require only minor adjustments in software and hardware. Typically, gold, a precious metal, is used in the circuit connections and gate structures of GaN products, but it makes GaN processing incompatible with CMOS processes. IMEC solves the compatibility problem based on a gold-free circuit connection system and a gold-free metal-insulated semiconductor (MIS) gate structure. This MISHEMT design can also effectively reduce the high leakage problem of traditional HEMTs (high electron mobility transistors).
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