STMicroelectronics Introduces Galvanic GapDRIVE: New Cutting-Edge Intelligent Integrated Gate Driver

Crystal oscillator

One-piece inductor

In a wide range of electronic applications, STMicroelectronics, one of the world’s leading semiconductor manufacturers, has introduced an advanced single-channel gate driver chip called STGAP1S. This innovative device integrates galvanic isolation along with analog and logic circuitry on a single chip, making it easier for engineers to simplify their driver designs while maintaining high noise immunity and reliable power control.

The STGAP1S is the first product in ST’s new generation of gapDRIVETM gate drivers. It leverages ST’s proprietary bipolar-CMOS-DMOS (BCD) process technology and incorporates innovative on-chip isolation layers, significantly enhancing system integration. Withstanding up to 1500V on high-voltage rails without affecting other circuits, this chip is ideal for industrial drives, high-power 600V or 1200V inverters, solar inverters, and uninterruptible power supplies.

Featuring a 100ns electrical isolation layer signal propagation delay, the STGAP1S ensures precise PWM signal transmission. The integrated driver stage can sink or source up to 5A, and rail-to-rail outputs support negative drive voltages. This makes it compatible with large insulated gate bipolar transistors (IGBTs) and wide-bandgap power switches such as silicon carbide MOSFETs. The chip also offers excellent common-mode transient immunity, withstanding up to ±50V/ns, and supports safe working environments with cross-electric isolation communication.

The separate design of the sink and source output enhances design flexibility and reduces the need for external components. Communication between the STGAP1S and the host controller is done via an industry-standard SPI interface, and internal control logic continuously monitors the operating status in real time. This allows the chip to provide detailed diagnostic information to the main controller, improving overall system protection and reliability.

Additionally, the STGAP1S includes multiple protection features that enhance its performance in harsh industrial environments. These include an active Miller clamp in the power stage to prevent unintended transistor turn-on, desaturation detection during short-circuit conditions, collector-emitter overvoltage protection, and output bi-level shutdown. Other protections include over-temperature, under-voltage (UVLO), over-voltage (OVLO), and over-current detection pins, ensuring safe and stable operation.

The STGAP1S is available in a compact SO24W package, offering high integration and a small footprint. This makes it an ideal choice for modern power electronics systems where space and performance are critical. For more details, visit the official STMicroelectronics website.